Silicon germanium alloy fins with reduced defects

ABSTRACT

A silicon germanium alloy is formed on sidewall surfaces of a silicon fin. An oxidation process or a thermal anneal is employed to convert a portion of the silicon fin into a silicon germanium alloy fin. In some embodiments, the silicon germanium alloy fin has a wide upper portion and a narrower lower portion. In such an embodiment, the wide upper portion has a greater germanium content than the narrower lower portion. In other embodiments, the silicon germanium alloy fin has a narrow upper portion and a wider lower portion. In this embodiment, the narrow upper portion of the silicon germanium alloy fin has a greater germanium content than the wider lower portion of the silicon germanium alloy fin.

BACKGROUND

The present application relates to semiconductor structures and methodsof forming the same. More particularly, the present application relatesto semiconductor structures containing a silicon germanium alloy finthat has reduced defects and extends upwards from a remaining portion ofa silicon substrate and methods of forming the same.

For more than three decades, the continued miniaturization of metaloxide semiconductor field effect transistors (MOSFETs) has driven theworldwide semiconductor industry. Various showstoppers to continuedscaling have been predicated for decades, but a history of innovationhas sustained Moore's Law in spite of many challenges. However, thereare growing signs today that metal oxide semiconductor transistors arebeginning to reach their traditional scaling limits. Since it has becomeincreasingly difficult to improve MOSFETs and therefore complementarymetal oxide semiconductor (CMOS) performance through continued scaling,further methods for improving performance in addition to scaling havebecome critical.

The use of non-planar semiconductor devices such as, for example,silicon fin field effect transistors (FinFETs) is the next step in theevolution of complementary metal oxide semiconductor (CMOS) devices.Silicon fin field effect transistors (FETs) can achieve higher drivecurrents with increasingly smaller dimensions as compared toconventional planar FETs. In order to extend these devices for multipletechnology nodes such as, for example, 10 nm and beyond, there is a needto boost the performance with high-mobility channels.

In such FinFET devices, a fin containing a silicon germanium alloy isone promising channel material because of its high-carrier mobility.Silicon germanium alloy fins can be formed by epitaxially growing asilicon germanium alloy layer on a surface of a silicon (Si) substrateand then patterning the silicon germanium alloy layer. This prior artmethod of forming silicon germanium alloy fins has some drawbacksassociated therewith. For example, the direct epitaxial growth of asilicon germanium alloy on a Si substrate has a critical thicknesslimit. Above the critical thickness, silicon germanium is very defectiveand is not suitable for use as a device channel material. This preventsa thick silicon germanium alloy layer for high fin heights. Moreover,this approach is not scalable for silicon germanium alloy fins having ahigh (i.e., greater than 70 atomic %) germanium content.

Another approach is to provide silicon germanium alloy fins is to firstform Si fins and shallow trench isolation (STI) structures andthereafter epitaxial grow a silicon germanium alloy fin on each sidewallsurface of each Si fin. This approach overcomes the critical thicknessproblem mentioned above. However, silicon germanium alloy fins that areepitaxially grown on sidewall surfaces of a Si fin with the presence ofdielectric oxide causes potential defect generation at the silicongermanium alloy fin/STI oxide corners.

In view of the above, there is a need for providing a method of formingsilicon germanium alloy fins that avoids the drawbacks associated withprior art silicon germanium alloy fin formation.

SUMMARY

A silicon germanium alloy is formed on sidewall surfaces of a siliconfin. An oxidation process or a thermal anneal is employed to convert aportion of the silicon fin into a silicon germanium alloy fin. In someembodiments, the silicon germanium alloy fin has a wide upper portionand a narrower lower portion. In such an embodiment, the wide upperportion has a greater germanium content than the narrower lower portion.In other embodiments, the silicon germanium alloy fin has a narrow upperportion and a wider lower portion. In this embodiment, the narrow upperportion of the silicon germanium alloy fin has a greater germaniumcontent than the wider lower portion of the silicon germanium alloy fin.

In one aspect of the present application, methods of formingsemiconductor structures are provided. In accordance with one embodimentof the present application, a method is provided that includes forming asilicon germanium alloy portion on each sidewall surface of a siliconfin, the silicon fin extending upward from a remaining portion of asilicon substrate. Next, a trench isolation dielectric material isprovided on exposed surfaces of the remaining portion of the siliconsubstrate and on exposed sidewall surfaces of each silicon germaniumalloy portion and the silicon fin. A portion of the silicon fin that islocated laterally adjacent each silicon germanium alloy portion isconverted into a silicon germanium alloy fin. The silicon germaniumalloy fin comprises a wide upper portion and a narrower lower portion.The silicon germanium alloy fin has a vertically graded germaniumcontent in which the wide upper portion of the silicon germanium alloyfin has a greater germanium content than the narrower lower portion ofthe silicon germanium alloy fin. Sidewall surfaces of the narrower lowerportion of the silicon germanium alloy fin are vertically coincidentwith sidewall surfaces of the silicon fin portion.

In another embodiment, a method is provided that includes forming asilicon germanium alloy layer on each sidewall surface of a silicon fin,the silicon fin extending upward from a silicon pedestal portion whichis present on a silicon base substrate. A trench isolation dielectricmaterial is provided on exposed surfaces of the silicon base substrateand on exposed sidewall surfaces of each silicon germanium layer and thesilicon fin. A portion of the silicon fin that is located laterallyadjacent each silicon germanium layer is converted into a silicongermanium alloy fin. The silicon germanium alloy fin comprises a narrowupper portion and a wider lower portion. The silicon germanium alloy finhas a vertically graded germanium content in which the narrow upperportion of the silicon germanium alloy fin has a greater germaniumcontent than the wider lower portion of the silicon germanium alloy fin.Sidewall surfaces of the wider lower portion of the silicon germaniumalloy fin are vertically coincident with sidewall surfaces of thesilicon pedestal portion.

In another aspect of the present application, semiconductor structuresare provided. In accordance with one embodiment of the presentapplication, a semiconductor structure is provided that includes asilicon fin portion extending upward from a remaining portion of asilicon substrate. A silicon germanium alloy fin is located on thesilicon fin portion and comprises a wide upper portion and a narrowerlower portion. The silicon germanium alloy fin has a vertically gradedgermanium content in which the wide upper portion of the silicongermanium alloy fin has a greater germanium content than the narrowerlower portion of the silicon germanium alloy fin and sidewall surfacesof the narrower lower portion of the silicon germanium alloy fin arevertically coincident with sidewall surfaces of the silicon fin portion.

In accordance with another embodiment of the present application, asemiconductor structure is provided that includes a silicon pedestalportion extending upward from a silicon base substrate. A silicongermanium alloy fin is located on the silicon pedestal portion andcomprises a narrow upper portion and a wider lower portion. The silicongermanium alloy fin has a vertically graded germanium content in whichthe narrow upper portion of the silicon germanium alloy fin has agreater germanium content than the wider lower portion of the silicongermanium alloy fin. The sidewall surfaces of the wider lower portion ofthe silicon germanium alloy fin are vertically coincident with sidewallsurfaces of the silicon pedestal portion.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a cross sectional view of an exemplary semiconductor structureincluding a plurality of silicon fins extending upwards from a surfaceof a remaining portion of a silicon substrate in accordance with a firstembodiment of the present application.

FIG. 2 is a cross sectional view of the exemplary semiconductorstructure of FIG. 1 after forming a silicon germanium alloy layer on allexposed surfaces of each silicon fin of the plurality of silicon finsand the remaining portion of the silicon substrate.

FIG. 3 is a cross sectional view of the exemplary semiconductorstructure of FIG. 2 after forming a sacrificial dielectric structurewithin each gap that is located between each silicon fin of theplurality of silicon fins.

FIG. 4 is a cross sectional view of the exemplary semiconductorstructure of FIG. 3 after forming a sacrificial spacer on an exposedouter sidewall surface of the silicon germanium alloy layer that islocated on each sidewall surface of each silicon fin and on a portion ofeach sacrificial dielectric structure.

FIG. 5 is a cross sectional view of the exemplary semiconductorstructure of FIG. 4 after removing each sacrificial dielectricstructure.

FIG. 6 is a cross sectional view of the exemplary semiconductorstructure of FIG. 5 after removing exposed portions of the silicongermanium alloy layer not protected by one of the sacrificial spacers toprovide a silicon germanium alloy portion on each sidewall surface ofeach silicon fin.

FIG. 7 is a cross sectional view of the exemplary semiconductorstructure of FIG. 6 after removing each sacrificial spacer and forming atrench isolation dielectric material having a topmost surface that iscoplanar with a topmost surface of each silicon fin.

FIG. 8 is a cross sectional view of the exemplary semiconductorstructure of FIG. 7 after converting a portion of the silicon fin thatis located laterally adjacent each silicon germanium alloy portion intoa silicon germanium alloy fin having a wide upper portion and a narrowerlower portion.

FIG. 9 is a cross sectional view of the exemplary semiconductorstructure of FIG. 8 after exposing at least a portion of the wider upperportion of the silicon germanium alloy fin.

FIG. 10 is a cross sectional view of the exemplary semiconductorstructure of FIG. 9 after formation of a gate structure.

FIG. 11 is a cross sectional view of an exemplary semiconductorstructure including a plurality of silicon fins of a first width thatare capped with a hard mask cap and extending upwards from a surface ofa remaining portion of a silicon substrate in accordance with a secondembodiment of the present application.

FIG. 12 is a cross sectional view of the exemplary semiconductorstructure of FIG. 11 after thinning each silicon fin to a second widththat is less than the first width.

FIG. 13 is a cross sectional view of the exemplary semiconductorstructure of FIG. 12 after forming a silicon germanium alloy layer onexposed surfaces of each silicon fin of the second width.

FIG. 14 is a cross sectional view of the exemplary semiconductorstructure of FIG. 13 after forming a sacrificial spacer on exposed outersidewall surfaces of each silicon germanium alloy layer and sidewallsurfaces of each hard mask cap.

FIG. 15 is a cross sectional view of the exemplary semiconductorstructure of FIG. 14 after recessing portions of the semiconductorsubstrate utilizing each sacrificial spacer and each hard mask cap as anetch mask.

FIG. 16 is a cross sectional view of the exemplary semiconductorstructure of FIG. 15 after removing each sacrificial spacer.

FIG. 17 is a cross sectional view of the exemplary semiconductorstructure of FIG. 16 after forming a trench isolation dielectricmaterial having a topmost surface that is coplanar with a topmostsurface of each hard mask cap.

FIG. 18 is a cross sectional view of the exemplary semiconductorstructure of FIG. 17 after converting the silicon fin and each silicongermanium alloy layer into a silicon germanium alloy fin having a narrowupper portion and a wider lower portion.

FIG. 19 is a cross sectional view of the exemplary semiconductorstructure of FIG. 18 after exposing at least a portion of the narrowupper portion of the silicon germanium alloy fin.

FIG. 20 is a cross sectional view of the exemplary semiconductorstructure of FIG. 19 after formation of a gate structure.

FIG. 21 is a cross sectional view of an exemplary semiconductorstructure including a plurality of silicon fins that are capped with ahard mask cap and extending upwards from a surface of a remainingportion of a silicon substrate in accordance with a third embodiment ofthe present application.

FIG. 22 is a cross sectional view of the exemplary semiconductorstructure of FIG. 21 after forming a silicon germanium alloy layer onexposed surfaces of each silicon fin.

FIG. 23 is a cross sectional view of the exemplary semiconductorstructure of FIG. 22 after forming a sacrificial dielectric structurewithin each gap that is located between each silicon fin of theplurality of silicon fins.

FIG. 24 is a cross sectional view of the exemplary semiconductorstructure of FIG. 23 after forming a sacrificial spacer on an exposedouter sidewall surface of the silicon germanium alloy layer that islocated on each sidewall surface of each silicon fin, sidewall surfacesof each hard mask cap and on a portion of each sacrificial dielectricstructure.

FIG. 25 is a cross sectional view of the exemplary semiconductorstructure of FIG. 24 after removing each sacrificial dielectricstructure.

FIG. 26 is a cross sectional view of the exemplary semiconductorstructure of FIG. 25 after removing exposed portions of the silicongermanium alloy layer not protected by one of the sacrificial spacers toprovide a silicon germanium alloy portion on each sidewall surface ofeach silicon fin.

FIG. 27 is a cross sectional view of the exemplary semiconductorstructure of FIG. 26 after removing each sacrificial spacer and forminga trench isolation dielectric material having a topmost surface that iscoplanar with a topmost surface of each hard mask cap.

FIG. 28 is a cross sectional view of the exemplary semiconductorstructure of FIG. 27 after converting a portion of the silicon fin thatis located laterally adjacent each silicon germanium alloy portion intoa silicon germanium alloy fin having a wide upper portion and a narrowerlower portion.

FIG. 29 is a cross sectional view of the exemplary semiconductorstructure of FIG. 28 after exposing at least a portion of the widerupper portion of the silicon germanium alloy fin.

FIG. 30 is a cross sectional view of the exemplary semiconductorstructure of FIG. 29 after formation of a gate structure.

DETAILED DESCRIPTION

The present application will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent application. It is noted that the drawings of the presentapplication are provided for illustrative purposes only and, as such,the drawings are not drawn to scale. It is also noted that like andcorresponding elements are referred to by like reference numerals.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide an understanding ofthe various embodiments of the present application. However, it will beappreciated by one of ordinary skill in the art that the variousembodiments of the present application may be practiced without thesespecific details. In other instances, well-known structures orprocessing steps have not been described in detail in order to avoidobscuring the present application.

Referring first to FIG. 1, there is illustrated an exemplarysemiconductor structure including a plurality of silicon fins 12extending upwards from a surface of a remaining portion of a siliconsubstrate 10 in accordance with a first embodiment of the presentapplication. Although a plurality of silicon fins 12 are shown, thepresent application can be employed only when a single silicon fin 12 isformed.

Each silicon fin 12 can be formed by first providing a silicon substrate10. The silicon substrate 10 that can be used in the present applicationcomprise an uppermost portion of a bulk silicon substrate or a topmostsilicon layer of a semiconductor-on-insulator substrate. The siliconsubstrate 10 that is employed in the present application is typicallysingle crystalline silicon. In one embodiment, the silicon substrate 10is non-doped (i.e., an intrinsic semiconductor material).

Each silicon fin 12 can be formed by patterning a portion of the siliconsubstrate 10. In one embodiment, the patterning process used to defineeach silicon fin 12 comprises a sidewall image transfer (SIT) process.The SIT process includes forming a contiguous mandrel material layer(not shown) on the topmost surface of the silicon substrate 10. Thecontiguous mandrel material layer (not shown) can include any material(semiconductor, dielectric or conductive) that can be selectivelyremoved from the structure during a subsequently performed etchingprocess. In one embodiment, the contiguous mandrel material layer (notshown) may be composed of amorphous silicon or polysilicon. In anotherembodiment, the contiguous mandrel material layer (not shown) may becomposed of a metal such as, for example, Al, W, or Cu. The contiguousmandrel material layer (not shown) can be formed, for example, bychemical vapor deposition or plasma enhanced chemical vapor deposition.The thickness of the contiguous mandrel material layer (not shown) canbe from 50 nm to 300 nm, although lesser and greater thicknesses canalso be employed. Following deposition of the contiguous mandrelmaterial layer (not shown), the contiguous mandrel material layer (notshown) can be patterned by lithography and etching to form a pluralityof mandrel structures (also not shown) on the topmost surface of thestructure.

The SIT process continues by forming a dielectric spacer on eachsidewall of each mandrel structure. The dielectric spacer can be formedby deposition of a dielectric spacer material and then etching thedeposited dielectric spacer material. The dielectric spacer material maycomprise any dielectric spacer material such as, for example, silicondioxide, silicon nitride or a dielectric metal oxide. Examples ofdeposition processes that can be used in providing the dielectric spacermaterial include, for example, chemical vapor deposition (CVD), plasmaenhanced chemical vapor deposition (PECVD), or atomic layer deposition(ALD). Examples of etching that be used in providing the dielectricspacers include any etching process such as, for example, reactive ionetching. Since the dielectric spacers are used in the SIT process as anetch mask, the width of the each dielectric spacer determines the widthof each silicon fin 12.

After formation of the dielectric spacers, the SIT process continues byremoving each mandrel structure. Each mandrel structure can be removedby an etching process that is selective for removing the mandrelmaterial as compared to silicon. Following the mandrel structureremoval, the SIT process continues by transferring the pattern providedby the dielectric spacers partially into the silicon substrate 10. Thepattern transfer may be achieved by utilizing at least one etchingprocess. Examples of etching processes that can used to transfer thepattern may include dry etching (i.e., reactive ion etching, plasmaetching, ion beam etching or laser ablation) and/or a chemical wet etchprocess. In one example, the etch process used to transfer the patternmay include one or more reactive ion etching steps. Upon completion ofthe pattern transfer, the SIT process concludes by removing thedielectric spacers from the structure. Each dielectric spacer may beremoved by etching or a planarization process.

In another embodiment, the patterning process used to define eachsilicon fin 12 can include lithography and etching. Lithography includesforming a photoresist material (not shown) on the topmost surface of thesilicon substrate 10. The photoresist material can be formed utilizing adeposition process such as, for example, spin-on coating, evaporation,or chemical vapor deposition. Following the deposition of thephotoresist material, the photoresist material is exposed to a patternof irradiation, and thereafter the exposed resist material is developedutilizing a conventional resist developer to provide a patternedphotoresist material. At least one etch as mentioned above for the SITprocess can be used here to complete the pattern transfer. Following atleast one pattern transfer etch process, the patterned photoresistmaterial can be removed from the structure utilizing a conventionalresist stripping process such as, for example, ashing.

As used herein, a “fin” refers to a contiguous semiconductor material,in the present case silicon, and including a pair of vertical sidewallsthat are parallel to each other. As used herein, a surface is “vertical”if there exists a vertical plane from which the surface does not deviateby more than three times the root mean square roughness of the surface.In one embodiment of the present application, each silicon fin 12 has aheight from 10 nm to 200 nm and a width from 4 nm to 30 nm. Otherheights and widths that are lesser than, or greater than the rangesmentioned herein can also be used in the present application. Eachsilicon fin 12 is spaced apart from its nearest neighboring silicon fin12 by a pitch of from 20 nm to 100 nm. Also, each silicon fin 12 isoriented parallel to each other. Furthermore, no material interfaceexists between each silicon fin 12 that is formed and the remainingportion of the silicon substrate 10.

Referring now to FIG. 2, there is illustrated the exemplarysemiconductor structure of FIG. 1 after forming a silicon germaniumalloy layer 14L on all exposed surfaces of each silicon fin 12 of theplurality of silicon fins and the remaining portion of the siliconsubstrate 10. In this embodiment of the present application, the silicongermanium alloy layer 14L is a contiguous layer that is formed on allexposed silicon surfaces including all exposed surfaces of each Si fin12 and the remaining portion of silicon substrate 10.

The silicon germanium alloy layer 14L is formed by an epitaxial growth(or epitaxial deposition) process. The terms “epitaxial growth and/ordeposition” and “epitaxially formed and/or grown” mean the growth of asemiconductor material on a deposition surface of a semiconductormaterial, in which the semiconductor material being grown has the samecrystalline characteristics as the semiconductor material of thedeposition surface. In an epitaxial deposition process, the chemicalreactants provided by the source gases are controlled and the systemparameters are set so that the depositing atoms arrive at the depositionsurface of a semiconductor material with sufficient energy to movearound on the surface and orient themselves to the crystal arrangementof the atoms of the deposition surface. Therefore, an epitaxialsemiconductor material that is formed by an epitaxial deposition processhas the same crystalline characteristics as the deposition surface onwhich it is formed. For example, an epitaxial semiconductor materialdeposited on a {100} crystal surface will take on a {100} orientation.In the present application, the silicon germanium alloy layer 14L has anepitaxial relationship, i.e., same crystal orientation, as that of theSi fin 12 and the remaining portion of semiconductor substrate 10.

Examples of various epitaxial growth processes that are suitable for usein forming the silicon germanium alloy layer 14L include, e.g., rapidthermal chemical vapor deposition (RTCVD), low-energy plasma deposition(LEPD), ultra-high vacuum chemical vapor deposition (UHVCVD),atmospheric pressure chemical vapor deposition (APCVD), molecular beamepitaxy (MBE) or metal-organic CVD (MOCVD). The temperature forepitaxial deposition typically ranges from 250° C. to 900° C. Althoughhigher temperature typically results in faster deposition, the fasterdeposition may result in crystal defects and film cracking.

A number of different source gases may be used for the deposition ofsilicon germanium alloy layer 14L. In some embodiments, the source gasfor the deposition of the silicon germanium alloy layer 14L includes amixture of a silicon containing gas source and a germanium containinggas source or a combined silicon and germanium source gas may be used.Carrier gases like hydrogen, nitrogen, helium and argon can be used.

The thickness of the silicon germanium alloy layer 14L that can beformed is from 2 nm to 20 nm. Other thicknesses that are lesser than, orgreater than, the aforementioned thickness range can also be employed inthe present application. The silicon germanium alloy layer 14L that isformed can have a germanium content of from 20 atomic % to 80 atomic %germanium. Other germanium contents that are lesser than, or greaterthan the aforementioned range may also be used in the presentapplication.

Referring now to FIG. 3, there is illustrated the exemplarysemiconductor structure of FIG. 2 after forming a sacrificial dielectricstructure 18 within each gap that is located between each silicon fin 12of the plurality of silicon fins. As is shown, the sacrificialdielectric structure 18 has a height that is less than the height ofeach silicon fin 12. The sacrificial dielectric structure 18 can beformed by first depositing an oxide material that can fill the gaps(i.e., a gap filling oxide material) between each silicon fin 12. In oneembodiment, the sacrificial dielectric structure 18 comprises an oxidethat can be derived from TEOS (tetraethylorthosilicate). In anotherembodiment, the sacrificial dielectric structure 18 may comprise aflowable oxide such as, for example, silicon oxide containing hydrogenand carbon. The deposition of the oxide material (i.e., gap fillingoxide material) may include for example, CVD or PECVD. In someembodiments and in which the gap filling oxide material overfills eachgap, a recess etch may follow the deposition of the gap filling oxidematerial. In some embodiments, no recess etch follows the deposition ofthe gap filling oxide. Instead, the deposition step only partially fillseach gap with the gap filling oxide material.

Referring now to FIG. 4, there is illustrated the exemplarysemiconductor structure of FIG. 3 after forming a sacrificial spacer 20on an exposed outer sidewall surface of the silicon germanium alloylayer 14L that is located on each sidewall surface of each silicon fin12 and on a portion of each sacrificial dielectric structure 18. Inaccordance with the present application, each sacrificial spacer 20 thatis provided comprises a different material than the oxide material usedin providing the sacrificial dielectric structure 18 and, as such, eachsacrificial spacer 20 has a different etch rate than each sacrificialdielectric structure 20. In one embodiment of the present application,each sacrificial spacer 20 comprises a dielectric nitride compound suchas, for example, silicon nitride. In yet another embodiment, eachsacrificial spacer 20 comprises a dielectric oxynitride compound suchas, for example, silicon oxynitride. Each sacrificial spacer 20 can beformed by first depositing the material that provides the sacrificialspacer 20. Illustrative examples of deposition processes that may beused to provide each sacrificial spacer 20 include chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD) orphysical vapor deposition (PVD). Following the deposition of thematerial that provides each sacrificial spacer 20, the depositedmaterial is subjected to a spacer etch such as, for example, reactiveion etching.

Referring now to FIG. 5, there is illustrated the exemplarysemiconductor structure of FIG. 4 after removing each sacrificialdielectric structure 18. Each sacrificial dielectric structure 18 isremoved utilizing an etching process that selectively removes the gapfilling oxide material relative to that of the material that providesthe sacrificial spacers 20 and the silicon germanium alloy layer 14L. Inone embodiment, HF can be used to selectively remove each sacrificialdielectric structure 18. As illustrated, the sacrificial spacers 20remain and protect portions of the silicon germanium alloy layer 14Lthat are located laterally adjacent an upper portion of each silicon fin12.

Referring now to FIG. 6, there is illustrated the exemplarysemiconductor structure of FIG. 5 after removing exposed portions of thesilicon germanium alloy layer 14L not protected by one of thesacrificial spacers 20 to provide a silicon germanium alloy portion 14Pon each sidewall surface of each silicon fin 12. In this embodiment, thesacrificial spacers 20 serves as an etch mask. The removal of theexposed portions of the silicon germanium alloy layer 14L comprises anisotropic etch that is selective in removing a silicon germanium alloyrelative to the material of the sacrificial spacer and silicon. In oneexample, a H₂O₂ etch may be used to remove the exposed portions of theof the silicon germanium alloy layer 14L. This step exposes eachsacrificial spacer 20, a lower portion of each silicon fin 12, a topmostsurface of each silicon fin 12 and a topmost surface of the remainingportion of silicon substrate 10.

As is shown in the drawings, each remaining silicon germanium alloyportion 14P has a topmost surface that is vertically offset and locatedbeneath a topmost surface of each silicon fin 12 and a topmost surfaceof each sacrificial spacer 20. Also, each remaining silicon germaniumalloy portion 14P has a bottommost surface that is vertically offset andlocated above a bottommost surface of each sacrificial spacer.

Referring now to FIG. 7, there is illustrated the exemplarysemiconductor structure of FIG. 6 after removing each sacrificial spacer20 and forming a trench isolation dielectric material 22 having atopmost surface that is coplanar with a topmost surface of each siliconfin 12. Each sacrificial spacer 20 can be removed utilizing an etchingprocess that selectively removes the sacrificial material that provideseach sacrificial spacer relative to the silicon germanium alloy portion14P, silicon fin 12 and the remaining portion of the silicon substrate10. In one embodiment of the present application, and when thesacrificial spacers 20 comprise silicon nitride, phosphoric acid can beused as an etchant.

The trench isolation dielectric material 22 comprises any trenchdielectric material including, for example, silicon dioxide. The trenchisolation dielectric material 22 can be formed utilizing any depositionprocess including for example, chemical vapor deposition or plasmaenhanced chemical vapor deposition. After depositing the trenchdielectric material, a planarization process such as, for example,chemical mechanical planarization (CMP) and/or grinding, may be used. Asis shown, the trench isolation dielectric material 22 has a topmostsurface that is coplanar with a topmost surface of each silicon fin 12.As is also shown, the trench isolation dielectric material 22 completelyfills the gaps that are located between each silicon fin 12.

Referring now to FIG. 8, there is illustrated the exemplarysemiconductor structure of FIG. 7 after converting a portion of thesilicon fin 12 that is located laterally adjacent each silicon germaniumalloy portion 14P into a silicon germanium alloy fin 24 having a wideupper portion 24U and a narrower lower portion 24L. In some embodimentsof the present application (as is shown) and when an oxidation processis used to convert a portion of the silicon fin 12 that is locatedlaterally adjacent each silicon germanium alloy portion 14P into asilicon germanium alloy fin 24, a silicon oxide layer 26L is formedsurrounding each silicon germanium alloy fin 24 and the remainingportion of each silicon fin 12. The silicon oxide layer 26L is locatedbetween the trench isolation dielectric material 22 and the fin stackof, from bottom to top, a remaining portion of silicon fin 12(hereinafter silicon fin portion 12P) and silicon germanium alloy fin24. The silicon fin portion 12P serves as a fin base for the silicongermanium alloy fin 24. Each silicon germanium alloy portion 14P istypically consumed during this step of the present application. In someembodiments (not depicted), it is possible that some portion of eachsilicon germanium alloy portion 14P may remain within the structure.

In one embodiment of the present application, and as mentioned above, anoxidation (i.e., thermal condensation) process is used to provide theexemplary semiconductor structure shown in FIG. 8, During the oxidationprocess, Si atoms in the each silicon germanium alloy portion 14P reactswith oxygen forming the silicon oxide layer 26L and Ge atoms from eachsilicon germanium alloy portion 14P diffuse laterally into a portion ofeach silicon fin 12 and react with Si to form the silicon germaniumalloy fin 24; the trench isolation dielectric material 22 serves as a Gediffusion cap. The oxidation process can be performed by an oxidizingambient such as, for example, oxygen, air, ozone, water vapor, and/orNO₂. In some embodiments, the oxidizing ambient can be admixed with aninert gas such as, for example, He, Ar and/or Ne. In such an embodiment,the inert gas constituent from 2 volume % to 95 volume % of an oxidizingambient containing admixture. The oxidation process can be performed ata temperature from 400° C. to 1300° C. The oxidation process may includea furnace anneal, a rapid thermal anneal or any other anneal that canconvert a portion of the silicon fin 12 into a silicon germanium alloyfin 24. By using the above described oxidation process, the silicongermanium alloy fin 24 that is formed has a width that is equal tothickness of Si fin 12 less the width of the width of each silicongermanium alloy portion 14P.

In another embodiment of the present application (not shown), a thermalanneal, i.e., thermal mixing, can be used to form the silicon germaniumalloy fin 24. During thermal annealing, Ge is diffused from the silicongermanium alloy portions 14P into the silicon fin 12 forming the silicongermanium alloy fin 24. When thermal annealing is performed, the thermalanneal can be carried out in an inert ambient such as, for example, He,Ar and/or Ne. The thermal anneal can be performed at a temperature from800° C. to 1350° C. The thermal anneal may include a furnace anneal, arapid thermal anneal or any other anneal that can convert the siliconfin 12 and the adjoining silicon germanium alloy layers 14P into asilicon germanium alloy fin 24. When thermal annealing is performed, thefinal thickness of the silicon germanium alloy fin 24 will be equal tothe total width of the Si fin 12 plus the width of both silicongermanium alloy portions 14P.

In another embodiment, both the oxidation process (i.e., thecondensation anneal) and the thermal mixing anneal can be performedsequentially or alternatingly. Either condensation or thermal mixing canbe performed first.

Each silicon germanium alloy fin 24 can have a germanium content withinthe range mentioned above for the silicon germanium alloy layer 14P. Inthe present application, the germanium content with the silicongermanium alloy fin is vertically graded. That is, the wide upperportion 24U of each silicon germanium alloy fin 24 may have a greatergermanium content than the narrower lower portion 24L of each siliconfin 24, with the lowest germanium content being located nearest theinterface with the underlying Si fin portion 12P. In this embodiment ofthe present application, the wide upper portion 24U of the silicongermanium alloy fin 24 has a defect density that is less than the defectdensity within the narrower lower portion 24L.

Referring now to FIG. 9, there is illustrated the exemplarysemiconductor structure of FIG. 8 after exposing at least a portion ofthe wide upper portion 24U of the silicon germanium alloy fin 24. Theexposing at least a portion of the wide upper portion 24U of the silicongermanium alloy fin 24 may include a recess etch that is selective inremoving dielectric material selective to silicon germanium. In oneexample, the recess etch may include hydrofluoric acid as an etchant.

The recess etch removes a portion of the trench isolation dielectricmaterial 22 and a portion of the silicon oxide layer 26L. The portionsof the trench isolation dielectric material 22 that remain may bereferred to herein as a trench isolation structure 22S, while theportions of the silicon oxide layer 26L that remain may be referred toherein as a silicon oxide liner portion 26P.

As is shown in FIG. 9, the exemplary semiconductor structure includes asilicon fin portion 12P extending upward from a remaining portion of asilicon substrate 10. A silicon germanium alloy fin 24 is located on thesilicon fin portion 12P and comprises a wide upper portion 24U and anarrower lower portion 24L. The silicon germanium alloy fin 24 has avertically graded germanium content in which the wide upper portion 24Uof the silicon germanium alloy fin 24 has a greater germanium contentthan the narrower lower portion 24L of the silicon germanium alloy fin24 and sidewall surfaces of the narrower lower portion 24L of thesilicon germanium alloy fin 24 are vertically coincident with sidewallsurfaces of the silicon fin portion 12P.

Referring now to FIG. 10, there is illustrated the exemplarysemiconductor structure of FIG. 9 after formation of a gate structure(28, 30). Although the present application describes and illustrates theformation of a single gate structure, a plurality of gate structures canbe formed straddling different portions of each silicon germanium alloyfin 24. The term “straddling” denotes that the gate structure is formedacross a silicon germanium alloy fin 24 such that a first portion ofeach gate structure is present on one side of the silicon germaniumalloy fin 24, and a second portion of each gate structure is present onanother side of the silicon germanium alloy fin 24. As shown in FIG. 10,a portion of the gate structure (28, 30) is also located on a topmostsurface of a portion of each dielectric isolation structure 22S.

In some embodiments of the present application, and as shown, the gatestructure (28, 30) is a functional gate structure. By “functional gatestructure” it is meant a permanent gate structure used to control outputcurrent (i.e., flow of carriers in the channel) of a semiconductingdevice through electrical or magnetic fields. Each functional gatestructure that is formed includes a gate material stack of, from bottomto top, a gate dielectric portion 28 and a gate conductor portion 30. Insome embodiments, a gate cap portion (not shown) can be present atop thegate conductor portion 30.

The gate dielectric portion 28 comprises a gate dielectric material. Thegate dielectric material that provides the gate dielectric portion 28can be an oxide, nitride, and/or oxynitride. In one example, the gatedielectric material that provides the gate dielectric portion 28 can bea high-k material having a dielectric constant greater than silicondioxide. Exemplary high-k dielectrics include, but are not limited to,HfO₂, ZrO₂, La₂O₃, Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃, HfO_(x)N_(y),ZrO_(x)N_(y), La₂O_(x)N_(y), Al₂O_(x)N_(y), TiO_(x)N_(y),SrTiO_(x)N_(y), LaAlO_(x)N_(y), Y₂O_(x)N_(y), SiON, SiN_(x), a silicatethereof, and an alloy thereof. Each value of x is independently from 0.5to 3 and each value of y is independently from 0 to 2. In someembodiments, a multilayered gate dielectric structure comprisingdifferent gate dielectric materials, e.g., silicon dioxide, and a high-kgate dielectric can be formed and used as the gate dielectric portion28.

The gate dielectric material used in providing the gate dielectricportion 28 can be formed by any deposition process including, forexample, chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), physical vapor deposition (PVD), sputtering, oratomic layer deposition. In some embodiments and when multiplefunctional gate structures are formed, each gate dielectric portion 28comprises a same gate dielectric material. In other embodiments and whenmultiple functional gate structures are formed, some of the gatedielectric portions may comprise a first gate dielectric material, whileother gate dielectric portions may comprise a second gate dielectricmaterial that differs in composition from the first gate dielectricmaterial. When a different gate dielectric material is used for the gatedielectric portions, block mask technology can be used. In oneembodiment of the present application, the gate dielectric material usedin providing the gate dielectric portion 28 can have a thickness in arange from 1 nm to 10 nm. Other thicknesses that are lesser than, orgreater than, the aforementioned thickness range can also be employedfor the gate dielectric material.

The gate conductor portion 30 comprises a gate conductor material. Thegate conductor material used in providing the gate conductor portion 30can include any conductive material including, for example, dopedpolysilicon, an elemental metal (e.g., tungsten, titanium, tantalum,aluminum, nickel, ruthenium, palladium and platinum), an alloy of atleast two elemental metals, an elemental metal nitride (e.g., tungstennitride, aluminum nitride, and titanium nitride), an elemental metalsilicide (e.g., tungsten silicide, nickel silicide, and titaniumsilicide) or multilayered combinations thereof. In some embodiments, thegate conductor portion 30 may comprise an nFET gate metal. In otherembodiments, the gate conductor portion 30 may comprise a pFET gatemetal. In yet other embodiments and when multiple functional gatestructures are formed, some of the gate conductor portions comprise annFET gate metal, while others gate conductor portions comprise a pFETgate metal.

The gate conductor material used in providing the gate conductor portion30 can be formed utilizing a deposition process including, for example,chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), physical vapor deposition (PVD), sputtering, atomiclayer deposition (ALD) or other like deposition processes. When a metalsilicide is formed, a conventional silicidation process is employed.When a different gate conductor material is used for the gate conductorportions, block mask technology can be used. In one embodiment, the gateconductor material used in providing the gate conductor portion 30 has athickness from 1 nm to 100 nm. Other thicknesses that are lesser than,or greater than, the aforementioned thickness range can also be employedfor the gate conductor material used in providing the gate conductorportion 30.

If present, the gate cap portion comprises a gate cap material. The gatecap material that provides each gate cap portion may include one of thedielectric materials mentioned above for hard mask material. In oneembodiment, each gate cap portion comprises silicon dioxide, siliconnitride, and/or silicon oxynitride. The dielectric material thatprovides each gate cap portion can be formed utilizing a conventionaldeposition process such as, for example, chemical vapor deposition orplasma enhanced chemical vapor deposition. The dielectric material thatprovides each gate cap portion can have a thickness from 5 nm to 20 nm.Other thicknesses that are lesser than, or greater than, theaforementioned thickness range can also be employed as the thickness ofthe dielectric material that provides each gate cap portion.

Each functional gate structure can be formed by providing a functionalgate material stack of, from bottom to top, the gate dielectricmaterial, the gate conductor material and, if present, the gate capmaterial. The functional gate material stack can then be patterned. Inone embodiment of the present application, patterning of the functionalgate material stack may be performed utilizing lithography and etching.

In other embodiments of the present application, the gate structure is asacrificial gate structure. By sacrificial gate structure” it is meant amaterial or material stack that serves as a placeholder for asubsequently formed functional gate structure. In such a process, thefunctional gate structure is formed after the source/drain structureshave been formed. In such an embodiment, the gate dielectric portion ofthe functional gate structure may be U-shaped. By “U-shaped” it is meanta material that includes a bottom horizontal surface and a sidewallsurface that extends upward from the bottom horizontal surface. Whenemployed, the sacrificial gate structure may include a sacrificial gatedielectric portion, a sacrificial gate material portion and asacrificial gate cap portion. In some embodiments, the sacrificial gatedielectric portion and/or sacrificial gate cap portion may be omitted.The sacrificial gate dielectric portion includes one of the dielectricmaterials mentioned above for the gate dielectric portion 28. Thesacrificial gate material portion includes one of the gate conductormaterials mentioned above for gate conductor portion 30. The sacrificialgate cap portion includes one of the gate cap material mentioned abovefor gate cap portions. The sacrificial gate structures can be formed bydeposition of the various material layers and then patterning theresultant sacrificial material sack by utilizing, for example,lithography and etching.

After forming the gate structure (functional or sacrificial gatestructure) source/drain regions (not) can be formed utilizing anepitaxial growth process from exposed portions of the silicon germaniumalloy fin 24 that are not protected by the gate structure; thesource/drain regions would by located with a plane that runs into andout of the drawing illustrated in FIG. 10. The source/drain regionscomprise any semiconductor material including, for example, Si, Ge orsilicon germanium alloys. The semiconductor material that provides thesource/drain regions is doped with an n-type dopant or a p-type dopantas are well known those skilled in the art. The doping may be achievedduring the epitaxial growth of the semiconductor material that providesthe source/drain regions or after epitaxial growth of an intrinsicsemiconductor material by utilizing ion implantation or gas phasedoping.

In some embodiments, and prior to formation of the source/drain regions,a gate spacer (also not shown) can be formed on exposed sidewalls of thegate structure. The gate spacer can be formed by deposition of a gatespacer material, such as, for example, a dielectric oxide, and thenetching the deposited gate spacer material by utilizing a spacer etch.

Referring now to FIG. 11, there is illustrated an exemplarysemiconductor structure including a plurality of silicon fins 12 of afirst width, w1, that are capped with a hard mask cap 50 and extendingupwards from a surface of a remaining portion of a silicon substrate 10in accordance with a second embodiment of the present application.

In this embodiment of the present application, each silicon fin 12 has aheight from 10 nm to 200 nm and first width, w1, from 4 nm to 30 nm.Other heights and widths that are lesser than, or greater than theranges mentioned herein can also be used in the present application.Each silicon fin 12 is spaced apart from its nearest neighboring siliconfin 12 by a pitch of from 20 nm to 100 nm. Also, each silicon fin 12 isoriented parallel to each other. Furthermore, no material interfaceexists between each silicon fin 12 that is formed and the remainingportion of the silicon substrate 10.

The exemplary semiconductor structure shown in FIG. 11 can be formed byfirst providing a blanket layer of a hard mask material on a surface ofa silicon substrate. The blanket layer of hard mask material is acontiguous layer that covers the entirety of the topmost semiconductormaterial layer 16L. The blanket layer of hard mask material that can beemployed in the present application may include a semiconductor oxide, asemiconductor nitride and/or a semiconductor oxynitride. In oneembodiment, the hard mask material that can be used in the presentapplication can be comprised of silicon dioxide. In another embodiment,the hard mask material that can be used in the present application canbe comprised of silicon nitride. In yet another embodiment, the hardmask material that can be used in the present application can include ahard mask stack of, in any order, silicon dioxide and silicon nitride.

In some embodiments, the hard mask material that can be used in thepresent application can be formed by a deposition process such as, forexample, chemical vapor deposition (CVD) or plasma enhanced chemicalvapor deposition (PECVD). In other embodiments, the hard mask materialthat can be used in the present application can be formed by a thermalprocess such as, for example, thermal oxidation and/or thermalnitridation. In yet other embodiments, the hard mask material that canbe used in the present application can be formed by a combination of adeposition process and a thermal process. The thickness of the hard maskmaterial that can be used in the present application can range from 2 nmto 10 nm, with a thickness from 3 nm to 6 nm being more typical.

After providing the blanket layer of hard mask material, the materialstack of the silicon substrate and blanket layer of hard mask materialis patterned utilizing one of the patterning processes mentioned abovein providing the exemplary semiconductor structure shown in FIG. 1. Thatis, SIT or lithography and etching can be used to form the exemplarysemiconductor structure shown in FIG. 11. Each hard mask cap 50 includesa remaining portion of the blanket layer of hard mask material. Also,each hard mask cap 50 that is formed has a bottommost surface that formsa material interface with a topmost surface of each silicon fin 12, andthe sidewall surfaces of each hard mask cap 50 are vertically coincidentto sidewall surfaces of a corresponding underlying silicon fin 12.

Referring now to FIG. 12, there is illustrated the exemplarysemiconductor structure of FIG. 11 after thinning each silicon fin 12 toa second width, w2, that is less than the first width, w1. The siliconfin having the second width, w2, can be referred to herein as a reducedthickness silicon fin 12R. In one embodiment of the present application,the reduced thickness silicon fin 12R can be formed by oxidationfollowed by an oxide removal etch. In another embodiment of the presentapplication, the reduced thickness silicon fin 12R can be formedutilizing a chemical downstream etch. In either process, the etch doesnot affect the hard mask cap 50; some thinning of the remaining portionof the silicon substrate 10 may occur during this step of the presentapplication.

Referring now FIG. 13, there is illustrated the exemplary semiconductorstructure of FIG. 12 after forming a silicon germanium alloy layer 54Lon exposed surfaces of each silicon fin of the second width (i.e., thereduced thickness silicon fin 12R). The silicon germanium alloy layer54L employed in this embodiment of the present application can be formedby epitaxy as previously described in providing the silicon germaniumalloy layer 14L to the exemplary semiconductor structure shown in FIG. 2of the present application. The silicon germanium alloy layer 54L ofthis embodiment of the present application can have a composition asdescribed above for silicon germanium alloy layer 14L.

Referring now to FIG. 14, there is illustrated the exemplarysemiconductor structure of FIG. 13 after forming a sacrificial spacer 56on exposed outer sidewall surfaces of each silicon germanium alloy layer54L and sidewall surfaces of each hard mask cap 50. Each sacrificialspacer 56 may include the same or a different material as that of thehard mask cap 50. In one embodiment, each sacrificial spacer 56comprises a same material (e.g., silicon nitride) as each hard mask cap50. Each sacrificial spacer 56 can be formed as described above informing sacrificial spacer 20. That is, each sacrificial spacer 56 canbe formed by depositing a sacrificial material, and then etching thesacrificial material to provide sacrificial spacer 56.

Referring now to FIG. 15, there is illustrated the exemplarysemiconductor structure of FIG. 14 after recessing remaining portions ofthe silicon substrate 10 utilizing each sacrificial spacer 56 and eachhard mask cap 50 as an etch mask. The recessing provides a siliconpedestal portion 10P located between each silicon fin 12 and a reducedthickness remaining portion of silicon substrate (the reduced thicknessremaining portion of silicon substrate is referred to herein as asilicon base substrate 10B).

Each silicon pedestal portion 10P has a third width that is greater thanthe second width of each silicon fin 12. In the present application, thethird width is equal to the second width plus the thickness of eachsacrificial spacer 56 that is located on sidewalls of each silicon fin12. Each silicon pedestal portion 10P has outer sidewalls that arevertically coincident to the outermost sidewalls of each sacrificialspacer 56.

The recess that provides the exemplary semiconductor structure shown inFIG. 15 comprises an anisotropic etch that is selective in removingsilicon as compared to the materials that provide the sacrificialspacers 56 and each hard mask cap 50. In one example, the recess etch isperformed utilizing a reactive ion etch (RIE) silicon etch process.

Referring now to FIG. 16, there is illustrated the exemplarysemiconductor structure of FIG. 15 after removing each sacrificialspacer 56. Each sacrificial spacer 56 can be removed utilizing anetching process that is selective in removing the sacrificial spacermaterial that provides each sacrificial spacer 56. During the removal ofeach sacrificial spacer 56, an upper portion of each hard mask cap 50may be removed.

Referring now to FIG. 17, there is illustrated the exemplarysemiconductor structure of FIG. 16 after forming a trench isolationdielectric material 58 having a topmost surface that is coplanar with atopmost surface of each hard mask cap 50. Trench isolation dielectricmaterial 58 includes a trench dielectric material as mentioned above fortrench isolation dielectric material 22. Trench isolation dielectricmaterial 58 can be formed utilizing the processing steps mentioned abovein forming trench isolation dielectric material 22.

Referring now to FIG. 18, there is illustrated the exemplarysemiconductor structure of FIG. 17 after converting the silicon fin 12and each silicon germanium alloy layer 54L into a silicon germaniumalloy fin 60 having a narrow upper portion 60U and a wider lower portion60L. The wider lower portion 60L of the silicon germanium alloy fin 60is formed within a topmost surface of the Si pedestal portion 10P. Thesilicon germanium alloy fin 60 can be formed by utilizing an oxidationprocess, as described above, or alternatively, a thermal anneal, as alsodescribed above, can be employed. In the illustrated embodiment, athermal anneal is shown by way of an example.

Each silicon germanium alloy fin 60 can have a germanium content withinthe range mentioned above for the silicon germanium alloy layer 54L. Inthe present application, the germanium content of each silicon germaniumalloy fin 60 is vertically graded. That is, the narrow upper portion 60Uof each silicon germanium alloy fin 60 may have a greater germaniumcontent than the wider lower portion 60L of each silicon fin 60, withthe lowest germanium content being located nearest the interface withthe underlying Si pedestal portion 10P. In this embodiment of thepresent application, the narrow upper portion 60U of the silicongermanium alloy fin 60 has a defect density that is less than the defectdensity within the wider lower portion 60L.

Referring now to FIG. 19, there is illustrated the exemplarysemiconductor structure of FIG. 18 after exposing at least a portion ofthe narrow upper portion 60U of the silicon germanium alloy fin 60. Theexposing at least a portion of the wide upper portion 60U of the silicongermanium alloy fin 60 may include a recess etch that is selective inremoving dielectric material selective to silicon germanium. In oneexample, the recess etch may include hydrofluoric acid as an etchant.The recess etch removes a portion of the trench isolation dielectricmaterial 58 to provide a trench isolation structure 58S.

As is shown in FIG. 19, a semiconductor structure is provided thatincludes a silicon pedestal portion 10P extending upward from a siliconbase substrate 10B. A silicon germanium alloy fin 60 is located on thesilicon pedestal portion 10P and comprises a narrow upper portion 60Uand a wider lower portion 60L. The silicon germanium alloy fin 60 has avertically graded germanium content in which the narrow upper portion60U of the silicon germanium alloy fin 60 has a greater germaniumcontent than the wider lower portion 60L of the silicon germanium alloyfin 60. The sidewall surfaces of the wider lower portion 60L of thesilicon germanium alloy fin 60 are vertically coincident with sidewallsurfaces of the silicon pedestal portion 10P.

Referring now to FIG. 20, there is illustrated the exemplarysemiconductor structure of FIG. 19 after formation of a gate structure.In one embodiment, gate structure may include a functional gatestructure (28, 30) that includes a gate dielectric portion 28 and a gateconductor portion 30 as were described above. In yet another embodiment,the gate structure is a sacrificial gate structure (as defined above)which can be replaced by a functional gate structure (28, 30) afterformation of the source/drain regions.

Referring now to FIG. 21, there is illustrated an exemplarysemiconductor structure including a plurality of silicon fins 12 (of thefirst width) that are capped with a hard mask cap 50 and extendingupwards from a surface of a remaining portion of a silicon substrate 10in accordance with a third embodiment of the present application. Thestructure shown in FIG. 21 can be formed as described above for formingthe exemplary semiconductor structure of FIG. 12. The only differencebetween the exemplary semiconductor structures shown in FIG. 12 and thatshown in FIG. 21 is the height of each silicon fin 12. In the presentembodiment, each silicon fin 12 has a height that is greater than theheight of each silicon fin 12 shown in FIG. 12.

Referring now to FIG. 22, there is illustrated the exemplarysemiconductor structure of FIG. 21 after forming a silicon germaniumalloy layer 54L on exposed surfaces of each silicon fin 12. The silicongermanium alloy layer 54L employed in this embodiment of the presentapplication can be formed by epitaxy as previously described inproviding the silicon germanium alloy layer 14L to the exemplarysemiconductor structure shown in FIG. 2 of the present application. Thesilicon germanium alloy layer 54L of this embodiment of the presentapplication can have a composition as described above for silicongermanium alloy layer 14L.

Referring now to FIG. 23, there is illustrated the exemplarysemiconductor structure of FIG. 22 after forming sacrificial dielectricstructure 70 within each gap that is located between each silicon fin ofthe plurality of silicon fins 12. As is shown, the sacrificialdielectric structure 70 has a height that is less than the height ofeach silicon fin 12. The sacrificial dielectric structure 70 can beformed by first depositing an oxide material that can fill the gaps(i.e., a gap filling oxide material) between each silicon fin 12. In oneembodiment, the sacrificial dielectric structure 70 comprises an oxidethat can be derived from TEOS (tetraethylorthosilicate). In anotherembodiment, the sacrificial dielectric structure 70 may comprise aflowable oxide such as, for example, silicon oxide containing hydrogenand carbon. The deposition of the oxide material (i.e., gap fillingoxide material) may include for example, CVD or PECVD. In someembodiments and in which the gap filling oxide material overfills eachgap, a recess etch may follow the deposition of the gap filling oxidematerial. In some embodiments, no recess etch follows the deposition ofthe gap filling oxide. Instead, the deposition step only partially fillseach gap with the gap filling oxide material.

Referring now to FIG. 24, there is illustrated the exemplarysemiconductor structure of FIG. 23 after forming a sacrificial spacer 72on an exposed outer sidewall surface of the silicon germanium alloylayer 54L that is located on each sidewall surface of each silicon fin12, sidewall surfaces of each hard mask cap 50 and on a portion of eachsacrificial dielectric structure 70. Sacrificial spacers 72 comprise oneof the sacrificial materials mentioned above for sacrificial spacers 20and they can be formed by deposition and etching as also described abovefor forming sacrificial spacers 20. Each sacrificial spacer 72 has abottommost surface, i.e., base, that is present on topmost surface ofthe sacrificial dielectric structure 70 and a topmost surface that iscoplanar with a topmost surface of each hard mask cap 50. Eachsacrificial spacer 72 may comprise a same material as, or a differentmaterial than, each hard mask cap 50.

Referring now to FIG. 25, there is illustrated the exemplarysemiconductor structure of FIG. 24 after removing each sacrificialdielectric structure 70. Each sacrificial dielectric structure 70 isremoved utilizing an etching process that selectively removes the gapfilling oxide material relative to that of the material that providesthe sacrificial spacers 72 and the silicon germanium alloy layer 54L. Inone embodiment, HF can be used to selectively remove each sacrificialdielectric structure 70. As illustrated, the sacrificial spacers 72 andthe hard mask caps 50 remain and protect portions of the silicongermanium alloy layer 54L and an upper portion of each silicon fin 12.

Referring now to FIG. 26, there is illustrated the exemplarysemiconductor structure of FIG. 25 after removing exposed portions ofthe silicon germanium alloy layer 54L not protected by one of thesacrificial spacers 72 to provide a silicon germanium alloy portion 54Pon each sidewall surface of each silicon fin 12. The removal of theexposed portions of the silicon germanium alloy layer 54L comprises anisotropic etch that is selective in removing a silicon germanium alloyrelative to the materials of the sacrificial spacer 72 and each hardmask cap 50 and silicon. In one example, a H₂O₂ etch may be used toremove the exposed portions of the of the silicon germanium alloy layer54L. This step exposes each sacrificial spacer 72, a lower portion ofeach silicon fin 12 and a topmost surface of the remaining portion ofsilicon substrate 10. As is shown in the drawings, each remainingsilicon germanium alloy portion 54P has a bottommost surface that isvertically offset and located above a bottommost surface of eachsacrificial spacer 72

Referring now to FIG. 27, there is illustrated the exemplarysemiconductor structure of FIG. 26 after removing each sacrificialspacer 72 and forming a trench isolation dielectric material 74 having atopmost surface that is coplanar with a topmost surface of each hardmask cap 50. Each sacrificial spacer 72 can be removed utilizing anetching process that selectively removes the sacrificial material thatprovides each sacrificial spacer relative to the silicon germanium alloyportion 54P, silicon fin 12, hard mask cap 50 and the remaining portionof the silicon substrate 10. In one embodiment of the presentapplication, and when the sacrificial spacers 72 comprise siliconnitride, phosphoric acid can be used as an etchant.

The trench isolation dielectric material 74 comprises any trenchdielectric material including, for example, silicon dioxide. The trenchisolation dielectric material 74 can be formed utilizing any depositionprocess including for example, chemical vapor deposition or plasmaenhanced chemical vapor deposition. After depositing the trenchdielectric material, a planarization process such as, for example,chemical mechanical planarization (CMP) and/or grinding, may be used. Asis shown, the trench isolation dielectric material 74 has a topmostsurface that is coplanar with a topmost surface of each hard mask cap50. As is also shown, the trench isolation dielectric material 74completely fills the gaps that are located between each silicon fin 12.

Referring now to FIG. 28, there is illustrated the exemplarysemiconductor structure of FIG. 27 converting a portion of the siliconfin 12 that is located laterally adjacent each silicon germanium alloyportion 54P into a silicon germanium alloy fin 80 having a wide upperportion 80U and a narrower lower portion 80L. Each silicon germaniumalloy fin 80 sits atop a remaining portion of silicon fin 12(hereinafter silicon fin portion 12P). The silicon fin portion 12Pserves as a fin base for the silicon germanium alloy fin 80. Eachsilicon germanium alloy portion 54P is typically consumed during thisprocess of the present application. In some embodiments (not depicted),it is possible that some portion of each silicon germanium alloy portion44P may reaming within the structure. The silicon germanium alloy fin 80can be formed by utilizing an oxidation process, as described above, oralternatively, a thermal anneal, as also described above, can beemployed. In the illustrated embodiment, an oxidation process is shownby way of an example. In this illustrated embodiment, the silicon oxidelayer is not shown since it comprises the same dielectric material astrench isolation dielectric material 74.

Each silicon germanium alloy fin 80 can have a germanium content withinthe range mentioned above for the silicon germanium alloy layer 54P. Inthe present application, the germanium content of each silicon germaniumalloy fin 80 is vertically graded. That is, the wide upper portion 80Uof each silicon germanium alloy fin 80 may have a greater germaniumcontent than the narrower lower portion 80L of each silicon germaniumalloy fin 80, with the lowest germanium content being located nearestthe interface with the underlying Si fin portion 12P. In this embodimentof the present application, the wide upper portion 80U of the silicongermanium alloy fin 80 has a defect density that is less than the defectdensity within the narrower lower portion 80L. In this embodiment,defects may be present at the top corners of each silicon germaniumalloy fin 80. Those defects are limited at the silicon germanium alloyfin 80 top portion due to the self-limiting (111) planes of the Si fin.Those defects can be removed either by etching or oxidation followed byoxide etch.

Referring now to FIG. 29, there is illustrated the exemplarysemiconductor structure of FIG. 28 after exposing at least a portion ofthe wider upper portion 80U of each silicon germanium alloy fin 80. Theexposing at least a portion of the wide upper portion 80U of the silicongermanium alloy fin 80 may include a recess etch that is selective inremoving dielectric material selective to silicon germanium. In oneexample, the recess etch may include hydrofluoric acid as an etchant.

The recess etch removes a portion of the trench isolation dielectricmaterial 74. The portions of the trench isolation dielectric material 74that remain may be referred to herein as a trench isolation structure74S.

As is shown in FIG. 29, the exemplary semiconductor structure includes asilicon fin portion 12P extending upward from a remaining portion of asilicon substrate 10. A silicon germanium alloy fin 80 is located on thesilicon fin portion 12P and comprises a wide upper portion 80U and anarrower lower portion 80L. The silicon germanium alloy fin 80 has avertically graded germanium content in which the wide upper portion 80Uof the silicon germanium alloy fin 80 has a greater germanium contentthan the narrower lower portion 80L of the silicon germanium alloy fin80 and sidewall surfaces of the narrower lower portion 80L of thesilicon germanium alloy fin 80 are vertically coincident with sidewallsurfaces of the silicon fin portion 12P.

Referring now to FIG. 30, there is illustrated the exemplarysemiconductor structure of FIG. 29 after formation of a gate structure.In one embodiment, gate structure may include a functional gatestructure (28, 30) that includes a gate dielectric portion 28 and a gateconductor portion 30 as were described above. In yet another embodiment,the gate structure is a sacrificial gate structure (as defined above)which can be replaced by a functional gate structure (28, 30) afterformation of the source/drain regions.

While the present application has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present application. It is therefore intended that the presentapplication not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. A semiconductor structure comprising: a siliconpedestal portion extending upward from a silicon base substrate; and asilicon germanium alloy fin located on the silicon pedestal portion andcomprising a narrow upper portion and a wider lower portion, wherein thesilicon germanium alloy fin has a vertically graded germanium content inwhich the narrow upper portion of the silicon germanium alloy fin has agreater germanium content than the wider lower portion of the silicongermanium alloy fin, wherein an entirety of an outermost sidewall of thewider lower portion of the silicon germanium alloy fin is verticallyaligned with an entirety of an outermost sidewall of the siliconpedestal portion.
 2. The semiconductor structure of claim 1, furthercomprising a trench isolation structure located on exposed surfaces ofthe silicon substrate and adjacent the silicon germanium alloy fin andthe silicon pedestal portion, wherein the trench isolation structure hasa height that is less than a height of the silicon germanium alloy fin,yet greater than a height of the wider lower portion of the silicongermanium alloy fin.
 3. The semiconductor structure of claim 2, furthercomprising a functional gate structure straddling the narrow upperportion of the silicon germanium alloy fin, and located on a topmostsurface of the trench isolation structure.
 4. The semiconductorstructure of claim 3, wherein the functional gate structure comprises agate dielectric material and a gate conductor, wherein the gatedielectric material of the functional gate structure directly contactssidewall surfaces and a topmost surface of the narrow upper portion ofthe silicon germanium alloy fin.
 5. The semiconductor structure of claim1, wherein the narrow upper portion of the silicon germanium alloy finhas a defect density that is less than a defect density of the widerlower portion of the silicon germanium alloy fin.
 6. The semiconductorstructure of claim 1, wherein the silicon germanium alloy fin has agermanium content of from 20 atomic percent to 80 atomic percent.
 7. Thesemiconductor structure of claim 1, wherein the germanium content of thewider lower portion of the silicon germanium alloy fin that is locatedat an interface formed between the wider lower portion of the silicongermanium alloy fin and the silicon pedestal portion is the lowestgermanium content within the silicon germanium alloy fin.
 8. Thesemiconductor structure of claim 1, wherein the silicon base substrateand the silicon pedestal portion are of unitary construction.
 9. Thesemiconductor structure of claim 1, wherein the wider lower portion ofthe silicon germanium alloy fin has a bottommost surface that directlycontacts a topmost surface of the silicon pedestal portion.
 10. Asemiconductor structure comprising: a silicon pedestal portion extendingupward from a silicon base substrate; and a silicon germanium alloy finlocated on the silicon pedestal portion and comprising a narrow upperportion and a wider lower portion, wherein the silicon germanium alloyfin has a vertically graded germanium content in which the narrow upperportion of the silicon germanium alloy fin has a greater germaniumcontent than the wider lower portion of the silicon germanium alloy fin,wherein sidewall surfaces of the wider lower portion of the silicongermanium alloy fin are vertically aligned with sidewall surfaces of thesilicon pedestal portion, and the narrow upper portion of the silicongermanium alloy fin has a defect density that is less than a defectdensity of the wider lower portion of the silicon germanium alloy fin,and further wherein an entirety of an outermost sidewall of the widerlower portion of the silicon germanium alloy fin is vertically alignedwith an entirety of an outermost sidewall of the silicon pedestalportion.
 11. The semiconductor structure of claim 10, further comprisinga trench isolation structure located on exposed surfaces of the siliconsubstrate and adjacent the silicon germanium alloy fin and the siliconpedestal portion, wherein the trench isolation structure has a heightthat is less than a height of the silicon germanium alloy fin, yetgreater than a height of the wider lower portion of the silicongermanium alloy fin.
 12. The semiconductor structure of claim 11,further comprising a functional gate structure straddling the narrowupper portion of the silicon germanium alloy fin, and located on atopmost surface of the trench isolation structure.
 13. The semiconductorstructure of claim 12, wherein the functional gate structure comprises agate dielectric material and a gate conductor, wherein the gatedielectric material of the functional gate structure directly contactsthe sidewall surfaces and a topmost surface of the narrow upper portionof the silicon germanium alloy fin.
 14. The semiconductor structure ofclaim 10, wherein the silicon germanium alloy fin has a germaniumcontent of from 20 atomic percent to 80 atomic percent.
 15. Thesemiconductor structure of claim 10, wherein the germanium content ofthe wider lower portion of the silicon germanium alloy fin that islocated at an interface formed between the wider lower portion of thesilicon germanium alloy fin and the silicon pedestal portion is thelower germanium content within the silicon germanium alloy fin.
 16. Thesemiconductor structure of claim 10, wherein the silicon base substrateand the silicon pedestal portion are of unitary construction.
 17. Thesemiconductor structure of claim 10, wherein the wider lower portion ofthe silicon germanium alloy fin has a bottommost surface that directlycontacts a topmost surface of the silicon pedestal portion.